Microwave Plasma Assisted Sputter (MPAS)
Are you looking for a microwave plasma assist system? We have collaborated with Albasense Technology in Paisley, Scotland to service and distribute these systems in the USA. This option is ideal for achieving a uniform coating on wafers within a short timeframe. You can select between single or multilayer deposition, the capability to mix materials, all at room temperature. Reach out to us today to learn more about this exceptional system and innovative technology.
-Microwaves (2.42GHz) have higher ionization efficiency than RF (13.56MHz) for a given plasma, particularly at low pressures, where the plasma conductivity is lower.
- Because of a lack of electrodes, the probability of contamination and damage for sensitive applications are significantly reduced, alongside a near maintainence-free approach.
- Lower ion energies can reduce damage in wafer processing. Oscillation amplitude for electrons in microwave plasmas is about 10_100 microns, so both electron loss and plasma potentials are much lower than in RF discharges.
- Resulting benefits for optical coatings are reduced stress, increased film packing density (minimised environmentally reduced spectral drift) and lowered optical absorption
- Microwave plasma effectively pre-conditions the chamber prior to deposition in relation to removal of water which is particularly important for deposition of infrared coatings Surface Wave Microwave Plasma delivery via a directional coupler ensures plasma uniformity across the rotating drum and separated deposition and reaction zones enables independent optimisation of deposition & plasma assist
• MPAS provides room temperature deposition, no need for separate heaters
• Multi-sputter targets provides means to separately deposit adhesion promoting coatings, single material coating deposition and/ or co-deposition of two different coatings materials including metals and/ or oxides .
• Separate deposition & microwave plasma processing regions provide use of microwave plasma for effective pre-preparation of deposition chamber (esp. water vapor removal which can disrupt coating processes) and substrate microwave plasma pre-clean prior to deposition
• Control system provides single layer or multilayer deposition.
• Optical gas control – plasma emission spectroscopy - for reactive deposition processes
• Flexibility in coating stoichiometric control through variation in microwave plasma conditions and gas composition, nanostructural modification & control through combination of microwave plasma/ pulsed DC/ plasma control
• Optional MPAS co-deposition providing simultaneous deposition of two or more materials resulting in mixed and/ or graded materials
• Optional MPAS hydrogenated processes provide method for material bandgap modification [eg silicon bandedge]
• Drum floats electrically and ion energy can be controlled by gas flow and/ or separately applied bias if required